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| Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 V A Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Maximum Ratings Parameter Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4395 Q67040-S4396 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 11N60C3 P-TO220-3-31 Q67040-S4408 Symbol ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 33 340 0.6 11 20 30 125 Value SPP_B SPP_B_I SPA Unit A 11 1) 71) 33 340 0.6 11 20 30 33 W C A V A mJ Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature -55...+150 Page 1 2003-07-01 Final data Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 C SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500A, VGS =VDS VDS=600V, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold - Values typ. 35 max. 1 3.8 62 80 62 260 Unit K/W C Values typ. 700 3 0.1 0.34 0.92 0.86 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=11A A 1 100 100 0.38 nA Gate-source leakage current I GSS VGS=30V, V DS=0V VGS=10V, ID=7A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Page 2 2003-07-01 Final data Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg td(on) tr td(off) tf Symbol gfs Ciss Coss Crss VGS=0V, VDS=0V to 480V SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Conditions min. VDS2*ID*R DS(on)max, ID=7A VGS=0V, VDS=25V, f=1MHz Values typ. 8.3 1200 390 30 45 85 10 5 44 5 max. 70 9 - Unit S pF Effective output capacitance,5) Co(er) VDD=380V, VGS=0/10V, ID=11A, RG =6.8 - ns VDD=480V, ID=11A - 5.5 22 45 5.5 60 - nC VDD=480V, ID=11A, VGS=0 to 10V V(plateau) VDD=480V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220C, reflow 5C 6C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-07-01 Final data Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.03 0.056 0.197 0.216 0.083 Tj P tot (t) C th1 C th2 C th,n SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Symbol IS I SM VSD t rr Q rr I rrm dirr /dt Conditions min. TC=25C Values typ. 1 400 6 41 1200 max. 11 33 1.2 600 - Unit A VGS =0V, IF=IS VR =480V, IF =IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPP_B_I SPA 0.15 0.03 0.056 0.194 0.413 2.522 R th1 Unit K/W Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPP_B_I 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 SPA 0.0001878 0.0007106 0.000988 0.002791 0.007401 0.412 Unit Ws/K E xternal H eatsink T am b Page 4 2003-07-01 Final data 1 Power dissipation Ptot = f (TC) 140 SPP11N60C3 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W 120 110 100 W 25 Ptot 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Ptot 20 15 10 5 C 160 0 0 20 40 60 80 100 120 TC C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Page 5 2003-07-01 Final data 5 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 6 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 1 K/W 10 0 K/W 10 0 ZthJC 10 -1 ZthJC 10 -1 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 40 8 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 22 A 32 28 20V 10V 8V 7V A 18 16 6,5V 20V 8V 7V 7.5V 6V ID 24 20 ID 14 12 5.5V 6V 10 8 5V 16 12 8 4 0 0 5,5V 5V 4,5V 6 4 2 0 0 5 10 15 4.5V 4V 3 6 9 12 15 18 21 27 V VDS V VDS 25 Page 6 2003-07-01 Final data 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 2 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V 2.1 SPP11N60C3 4V 4.5V 5V 5.5V 6V 1.8 1.6 1.4 1.2 1.4 1.2 RDS(on) RDS(on) 1.6 1 0.8 0.6 98% 1 0.8 0.6 6.5V 8V 20V 2 4 6 8 10 12 14 16 0.4 0.2 typ 0.4 0 A ID 20 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 40 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 11 A pulsed 16 SPP11N60C3 A 32 25C V 12 VGS 28 ID 24 20 16 12 150C 10 0,2 VDS max 0,8 VDS max 8 6 4 8 4 0 0 2 2 4 6 8 10 12 V 15 VGS 0 0 10 20 30 40 50 nC 70 QGate Page 7 2003-07-01 Final data 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP11N60C3 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 14 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, RG=6.8 ns 70 A 60 55 td(off) 10 1 50 45 IF t 40 35 30 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 25 20 15 10 5 2.4 V 3 0 0 tr tf td(on) 0 0.4 0.8 1.2 1.6 2 2 4 6 8 A ID 12 VSD 15 Typ. switching time t = f (RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, ID=11 A 350 16 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=11A 3000 ns A/s 250 200 150 td(off) td(on) tr tf di/dt 100 2000 t 1500 1000 di/dt(off) 50 500 di/dt(on) 0 0 10 20 30 40 50 RG 70 0 0 20 40 60 80 RG 120 Page 8 2003-07-01 Final data 17 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=11A 140 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 18 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG=6.8 0.04 V/ns 120 110 dv/dt(off) mWs *) Eon includes SPD06S60 diode commutation losses 0.03 dv/dt 100 80 70 60 50 40 30 20 10 0 10 20 30 40 50 dv/dt(on) E 90 0.025 0.02 0.015 Eon* 0.01 0.005 Eoff RG 70 0 0 2 4 6 8 A ID 12 19 Typ. switching losses E = f(RG), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V, ID=11A 0.24 *) Eon includes SPD06S60 diode commutation losses 20 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 11 A 9 8 mWs IAR 0.16 Eoff E 7 6 0.12 5 0.08 Eon* T j(START)=25C 4 3 2 1 T j(START)=125C 0.04 0 0 10 20 30 40 50 RG 70 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR Page 9 2003-07-01 Final data 21 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 350 720 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 22 Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP11N60C3 mJ V 250 V(BR)DSS C 680 660 640 620 600 EAS 200 150 100 580 50 560 540 -60 0 20 40 60 80 100 120 160 -20 20 60 100 C 180 Tj Tj 23 Avalanche power losses PAR = f (f ) parameter: EAR =0.6mJ 300 24 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF W 10 3 Ciss P AR 200 C 150 10 2 Coss 100 10 1 50 Crss 04 10 10 5 Hz f 10 6 10 0 0 100 200 300 400 V 600 VDS Page 10 2003-07-01 Final data 25 Typ. Coss stored energy Eoss=f(VDS) 7.5 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 J 6 5.5 Eoss 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 11 2003-07-01 Final data P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D2-PAK) 9.98 0.48 0.05 Page 12 2003-07-01 Final data P-TO-262-3-1 (I2-PAK) 10 0.2 0...0.3 8.5 1) 1) SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 A B 4.4 1.27 1 0.3 11.6 0.3 2.4 C 4.55 0.2 13.5 0.5 0...0.15 1.05 3 x 0.75 0.1 2 x 2.54 1) 0.5 0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) 9.25 0.2 7.55 0.05 Page 13 2003-07-01 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2003-07-01 |
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